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| AOP605 Complementary Enhancement Mode Field Effect Transistor General Description The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) RDS(ON) < 28m (VGS = 10V) < 35m (VGS = -10V) < 43m (VGS = 4.5V) < 58m (VGS = -4.5V) D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 7.5 6 30 2.5 1.6 -55 to 150 W C Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL Typ 40 67 33 Typ 38 66 30 Max 50 80 40 Max 50 80 40 Units C/W C/W C/W Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP605 n-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A Forward Transconductance VDS=5V, ID=7.5A 12 Body Diode Forward Voltage IS=1A, VGS=0V Maximum Body-DiodeContinuous Current TJ=125C 33 16 0.76 1 4 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=4.5V, VDS=15V, ID=7.5A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.0, RGEN=6 IF=7.5A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 20 3.6 16.6 8.1 820 43 1 30 22.6 28 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. Coss Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 3 : June 2005 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 25 20 ID (A) 15 10 5 0 0 10V 6V 5V 4.5V 20 16 12 8 4 0 125C 25C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS=5V 4V ID(A) 4 5 3.5V VGS=3V 1 2 3 VDS (Volts) Fig 1: On-Region Characteristics VGS (Volts) Figure 2: Transfer Characteristics 60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature ID=7.5A VGS=10V VGS=4.5V VGS=10V 70 60 RDS(ON) (m) 50 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=7.5A IS Amps 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=7.5A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited TJ(Max)=150C TA=25C 1ms 10ms 0.1s 100s 10s Power W 40 TJ(Max)=150C TA=25C 30 ID (Amps) 10 20 1 1s 10s DC 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0.1 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T 100 1000 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP605 p-channel MOSFET Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6.6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6.6A TJ=125C -1.2 30 28 37 44 13 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.5 VGS=-10V, VDS=-15V, ID=-6.6A 9.6 2.7 4.5 7.7 VGS=-10V, VDS=-15V, RL=2.3, RGEN=3 IF=-6.6A, dI/dt=100A/s 5.7 20.2 9.5 20 8.8 24 4.4 22.2 11.6 1100 35 45 58 -2 Min -30 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any en application depends on the the user's specific board design. The current rating is based the the 10s10s thermal given application depends on user's specific board design. The current rating is based on on t t thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 3 : June 2005 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 VGS=-4.5V Normalized On-Resistance 55 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 65 60 55 RDS(ON) (m) 50 45 40 35 30 25 20 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C 1.0E-01 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C ID=-6.6A 1.0E+01 1.0E+00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V 1.60 ID=-6.6A 1.40 VGS=-10V VGS=-4.5V 1.20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -6V -5V -4.5V 25 20 -ID(A) 15 10 5 125C 25C 30 VDS=-5V -4V 1.00 Alpha & Omega Semiconductor, Ltd. AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 VDS=-15V ID=-6.6A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Crss 4 2 0 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC Power (W) 40 TJ(Max)=150C TA=25C 30 -ID (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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